SFH487 GaAlAs High Power Infrared Emitting Diode

Product Details

SFH487 GaAlAs High Power Infrared Emitting Diode
Siemens

2269

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Description:

SFH487 GaAlAs High Power Infrared Emitting Diode

A very high power, high

intensity, gallium aluminium arsenide

infrared emitting diode, that emits radiation in the near infra-red range (880nm peak). The emitted radiation, which can be modulated, is generated by forward flowing current. The device is enclosed in a 3mm plastic package with a clear blue plastic lens. Typical applications include IR remote control of colour TV receivers, smoke detectors, and other applications requiring very high power, such as IR touch screens.

Specifications:

Peak wavelength emission

IF =10mA:

880nm

Radiant intensity

IF =100mA, tP = 20ms:

>equal;32mW/sr

IF =1A, tP =100╡s:

300mW/sr

Total radiant flux

IF =100mA, tP = 20ms:

25mW

Spectral bandwidth IF =10mA:

80nm

Half angle:

▒20°

Reverse voltage:

Forward current:

100mA

Surge current (t=10╡s):

2· 5A

Forward voltage

IF =100mA tP = 20ms:

1· 30V

IF =1A tP =100╡s:

1· 9V

Breakdown voltage (IR =10╡A):

30V

Reverse current (VR = 5V):

0· 10╡A

Capacity (VR = 0V):

25pF

Power dissipation at 25°C:

200mW

Junction temperature:

100°C